Farashin GSGG


  • Abun ciki:(Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12
  • Tsarin Crystal:Cubic: a = 12.480 Å
  • Kwayoyin wDielectric akai-akai:968,096
  • Matsayin narkewa:~ 1730 oC
  • Yawan yawa:~ 7.09 g/cm 3
  • Tauri:~ 7.5 (watanni)
  • Indexididdigar raɗaɗi:1.95
  • Dielectric akai-akai: 30
  • Cikakken Bayani

    Siffofin fasaha

    GGG/SGGG/NGG Garnets ana amfani da ruwa epitaxy.SGGG subbatrates aka sadaukar substrates ga magneto-Optical film.A cikin Tantancewar sadarwa na'urorin, na bukatar mai yawa ta amfani da 1.3u da 1.5u Tantancewar isolator, yana da core bangaren ne YIG ko BIG film. an sanya shi a cikin filin maganadisu.
    SGGG substrate yana da kyau kwarai don haɓaka fim ɗin garnet na baƙin ƙarfe da aka maye gurbin bismuth, abu ne mai kyau don YIG, BiYIG, GdBIG.
    Yana da kyawawan kaddarorin jiki da na inji da kwanciyar hankali na sinadarai.
    Aikace-aikace:
    YIG, BIG epitaxy fim;
    Na'urorin Microwave;
    Canjin GGG

    Kaddarori:

    Abun ciki (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12
    Tsarin Crystal Cubic: a = 12.480 Å,
    Molecular wDielectric akai-akai 968,096
    Matsayin narkewa ~ 1730 oC
    Yawan yawa ~ 7.09 g/cm 3
    Tauri ~ 7.5 (watanni)
    Indexididdigar refractive 1.95
    Dielectric akai-akai 30
    Dielectric asarar tangent (10GHz) ca.3.0 * 10_4
    Hanyar girma ta Crystal Czochralski
    Crystal girma shugabanci <111>

    Ma'aunin Fasaha:

    Gabatarwa <111> <100> a cikin ± 15 arc min
    Wave Front Distortion <1/4 kalaman @ 632
    Haƙuri na Diamita ± 0.05mm
    Haƙuri Tsawon ± 0.2mm
    Chamfer 0.10mm@45º
    Lalata <1/10 a 633nm
    Daidaituwa < 30 arc seconds
    Daidaitawa < 15 arc min
    ingancin saman 10/5 Scratch/Dig
    Bayyana Bugawa >90%
    Manyan Girman Crystals 2.8-76 mm a diamita