Cr4 +: YAG Crystals

Cr4+: YAG abu ne mai mahimmanci don sauyawa Q-switching na Nd: YAG da sauran Nd da Yb doped lasers a cikin kewayon tsayin 0.8 zuwa 1.2um. Yana da kwanciyar hankali da aminci, tsawon rayuwar sabis da babban lalacewa kofa.


  • Sunan samfur:Cr4+: Y3Al5O12
  • Tsarin Crystal:Cubic
  • Matsayin Dopant:0.5mol-3mol%
  • Moh Hardness:8.5
  • Fihirisar Rarraba:1.82 @ 1064nm
  • Gabatarwa: <100>cikin 5° ko cikin 5°
  • Ƙididdigar sha na farko:Matsakaicin sha na farko
  • Farkon watsawa:3% ~ 98%
  • Cikakken Bayani

    Siffofin fasaha

    Rahoton gwaji

    Cr4 +: YAG abu ne mai mahimmanci don sauyawa Q-switching na Nd: YAG da sauran Nd da Yb doped lasers a cikin kewayon tsayin 0.8 zuwa 1.2um. Yana da kwanciyar hankali da aminci, tsawon rayuwar sabis da babban lalacewa kofa.
    Amfanin Cr4+: YAG
    • Babban kwanciyar hankali da aminci
    • Kasancewa da sauƙin sarrafawa
    • Babban iyakar lalacewa (> 500MW/cm2)
    • A matsayin babban iko, m jihar da m m Q-Switch
    • Tsawon lokaci mai tsawo da kuma kyakkyawan halayen thermal
    Kayayyakin asali:
    • Cr 4+ :YAG ya nuna cewa bugun jini nisa na passively Q-switched lasers iya zama gajere kamar 5ns don diode famfo Nd: YAG Laser da maimaita har zuwa 10kHz ga diode famfo Nd: YVO4 Laser.Bugu da ƙari, an samar da ingantacciyar fitowar kore @ 532nm, da fitarwar UV @ 355nm da 266nm, bayan sharar intracavity na gaba SHG a cikin KTP ko LBO, THG da 4HG a cikin LBO da BBO don diode famfo da m Q-switched Nd: YAG da Nd: Farashin YVO4.
    • Cr 4+ :YAG kuma kristal ne na Laser tare da kayan aiki mai sauƙi daga 1.35 µm zuwa 1.55 µm.Yana iya haifar da ultrashort bugun jini Laser (zuwa fs pulsed) lokacin da Nd: YAG Laser ya buga shi a 1.064 µm.

    Girman: 3 ~ 20mm, H × W: 3 × 3 ~ 20 × 20mm A kan bukatar abokin ciniki
    Haƙuri na girma: Diamita Diamita: ± 0.05mm, tsayi: ± 0.5mm
    Ƙarshen ganga Ƙarshen ƙasa 400#Gmt
    Daidaituwa ≤ 20″
    Daidaitawa ≤ 15"
    Lalata <λ/10
    ingancin saman 20/10 (MIL-O-13830A)
    Tsawon tsayi 950 nm ~ 1100nm
    Tunani Mai Rufe AR ≤ 0.2% (@1064nm)
    Ƙofar lalacewa ≥ 500MW/cm2 10ns 1 Hz a 1064nm
    Chamfer <0.1mm @ 45°

    ZnGeP201